Development of Perovskite Photodetectors for lmage Sensing Application


      周航 ,北京大学深圳研究生院副教授,博士生导师。博士毕业于剑桥大学工程系,曾在伦敦纳米技术中心担任博士后研究工作,现任深圳市薄膜晶体管与先进显示重点实验室副主任,主要研究领域为钙钛矿光电器件、太阳能电池、柔性电池等。已主持国家级项目1项,省部级项目2项,市级项目5项。近五年累计发表SCI/EI论文40余篇,代表论文收录在Advanced Materials、Nano Letters等期刊上,在光电探测器领域有多篇高倍引文章,钙钛矿光电器件论文被英国物理协会旗下核心杂志评委2015年十大热点文章。


      Low cost organolead halide perovskite materials, with their outstanding optoelectronic properties, provide new opportunities for developing high sensitive photodetectors for various sensing scenarios, such as UV, Infrared and X-ray imaging. In this talk, I am going to review the development of perovskite photodetectors, including their fabrication and patterning techniques. In particular, I will talk about the development of hybrid phototransistors in my group. Heterogenous integration of oxide TFT with an organolead halide perovskite photoabsorber is an attractive approach for developing low noise sensors. In theory, a wide spectral response and an ultralow low dark current can be achieved in the hybrid phototransistor at the same time. Nonetheless, the performance of oxide TFT is usually affected by the perovskite deposition process. By inserting a PCBM:PMMA interlayer between the patterned MAPbI3 and IGZO, the damage of IGZO TFT by the perovskite fabrication process can be avoided. In this configuration, a high-detectivity (1.35 × 1012 Jones) perovskite-IGZO phototransistor with suppressed off-state drain current (∼10 pA) is achieved.