Dong ChengyuanAssociate Professor




Chenyuan Dong received his B.S. and Ph.D. from Shanghai Jiao Tong University in 1993 and 2003 respectively. From 2003 to 2008 he worked as a principal engineer / project manager in China’s main TFT-LCD makers including SVA-NEC, IVO and Tianma Microelectronics. Dr. Dong as the key member joined the setup of the first G5 TFT-LCD fabrication line in China.  From Nov. 2008, Dr. Dong became an associate professor in Shanghai Jiao Tong University where he has been focusing on teaching and research in the field of thin film electronic devices and integrations. Till now he has published 1 book, more than 60 papers, and 10 Chinese patents.
Research Areas
Macroelectronics, the technology to realize devices, circuits, and systems on large-area substrates, such as glass, polymer, etc.
1.Thin film electronic devices and circuits relating thin film transistors (TFTs), thin film sensors (TFSs), thin film memories (TFMs) etc.
2. Macroelectronic design and fabrication for flat panel displays (FPDs), imaging sensors, and memory arrays etc.
Outstanding prize from SID Beijing Chapter, 2021
1.“Principles and Applications of Thin Film Transistors”, 2012-2017
2.“Display Electronics”, Autumn 2011-2012
3.“Thin Film Transistor Technologies”, Autumn 2012-2016
Books and Patent
Principles and Applications of Thin Film Transistors, Qinghua University Press, 2016
Selected Publications
1.Haiting Xie, Jianeng Xu, Guochao Liu, Lei Zhang, and Chengyuan Dong*,"Development and Analysis of Nitrogen-Doped Amorphous InGaZnO Thin Film Transistors", Mater. Sci. Semicond. Process., 64,1-5 (2017)
2.Haiting Xie, Qi Wu, Ling Xu, Lei Zhang, Guochao Liu, and Chengyuan Dong*," Nitrogen-Doped Amorphous Oxide Semiconductor Thin Film Transistors with Double-Stacked Channel Layers", Applied Surface Science, 387, 237–243 (2016)
3.Zhe Hu, Chengyuan Dong*, Daxiang Zhou, Yuting Chen, Jie Wu, Haiting Xie, Cheng-Lung Chiang, Po-Lin Chen, Tzu-Chieh Lai, Chang-Cheng Lo and A. Lien, " Thermal Stability of Amorphous InGaZnO Thin Film Transistors with Different Oxygen-Contained Active Layers", J. Disp. Technol., 11,610-614 (2015)
4.Chengyuan Dong*, Jie Wu, Yuting Chen, Daxiang Zhou, Zhe Hu, Haiting Xie, Cheng-Lung Chiang, Po-Lin Chen, Tzu-Chieh Lai, Chang-Cheng Lo and A. Lien, “Comparative study of amorphous indium gallium zinc oxide thin film transistors passivated by sputtered non-stoichiometric aluminum and titanium oxide layers”, Mater. Sci. Semicond. Process., 27, 719-724 (2014)
5.Chengyuan Dong*, Yuting Chen, Zhe Hu, Jie Wu, Daxiang Zhou, Haiting Xie, Cheng-Lung Chiang, Po-Lin Chen, Tzu-Chieh Lai, Chang-Cheng Lo and A. Lien, “Process development of inverted-staggered amorphous InGaZnO thin film transistors with wet-etched electrodes”, J. Soc. Inf. Display, 21/11, 461-466 (2014)