报告人简介

Seungyoung Ahn received the B.S., M.S., and Ph.D. degrees in Electrical Engineering from the Korea Advanced Institute of Science and Technology (KAIST), Daejeon, South Korea, in 1998, 2000, and 2005, respectively. From 2005 to 2009, he was a Senior Researcher in Computer Systems Division in Samsung Electronics. From 2009 to 2011, he was a Research Professor at KAIST and designed magnetic resonant wirel.

报告摘要

The achievements of semiconductor technology are constantly creating new challenges in EMC. In case passive semiconductor, the package of high bandwidth devices with high frequency operation require accurate and wide-band equivalent model for best performance with minimal size. These semiconductor components and devices are now breaking the bottleneck of size reduction and data rate increase. Therefore, accurate modeling of these semiconductor components considering the material characteristics from kHz to GHz is necessary for the system performance.

In this lecture, the modeling of through silicon via (TSV) is discussed. Beginning with the understanding of physical characteristics of semiconductor and the mathematical model, the recent electrical equivalent circuit models at high frequency are explained. While the ultimately small size of TSV packages and low cost multi-IC modules are developed, the package structure, bias conditions, temperature, and trapped charges are the main factors determining the metal-oxide-silicon capacitance and the overall system performance. The signal integrity and power integrity analysis considering these factors are also discussed based on recent research trend.